THz Schottky Devices

Schottky-Dioden für den THz-Bereich

Prof. Dr. Eng. Dr. h. c. mult H. L. Hartnagel

Dr. Ing. O. Cojocari

Dr. Ing. C. Sydlo

Dipl. Ing. D. Schönherr

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The development of Schottky devices for the THz-range is a key issue for atmospheric investigations and medical applications (e.g.detection of greenhouse gases, cancer detection). III/V compound semiconductors are used for these applications as they provide the required device speed and allow a high flexibility in the fabrication process (bandgap engineering). The research is focused on the development of a III/V-based Schottky device process (varistor, varactor) with emphasis on exellent noise properties, near-ideal diode characteristics and device reliability. The fabrication ranges from whisker-diodes to planar diodes for mixer- and multiplier application. For this purpose, the required technology is available including e.g. a MBE, lithography, evaporation and etching systems. The devices are designed applying state-of-the-art electro-magnetic modeling tools like CST Microwave studio.

  • Varistors and varactors
  • Mixer and Multiplier operation
  • Application in corner cubes
  • Test samples for process control
  • Process optimisation
  • Process control
  • Quasi-vertical design approach
  • Airbridge technology
  • Membrane technology
  • Technological complexity
  • Application in mixer and multipliers
  • Flip-chip mounting
  • Integration with filter structures
  • Reliability tests
  • MEMS
  • Material science

Veröffentlichungen

  • C. Sydlo and O. Cojocari and D. Schoenherr and T. Goebel and P. Meissner and H.L. Hartnagel. Fast THz detectors based on InGaAs Schottky Diodes – In Frequenz, 2008.
  • Daniel Schoenherr and Oleg Cojocari and Cezary Sydlo and Thorsten Goebel and Hans Ludwig Hartnagel and Peter Meissner. Broadband Schottky Diode Based THz Detector – WOCSDICE 2008.