THzNanoVision
THzNanoVision is an intended spin-off project at the Department of Terahertz Devices and Terahertz Systems, at the Department of Electrical Engineering and Information Technology, Technical University of Darmstadt. In this project, the Hessian Distr@l program supports the further development and validation of GaN-based terahertz sources. THzNanoVision is led by Dr.-Ing. Ahid S. Hajo.
Digital innovation / technology
THzNanoVision develops compact, patented sources for the generation and use of Terahertz (THz) waves in order to create the basis for a cross-sectional technology in the field of data transmission in the long term. THzNanoVision's core innovation is its patented semiconductor technologies that enable the development of biocompatible, low-cost, high-performance, as well as easy-to-install THz sources that are nearly impossible to achieve with current technologies. Our technology, based on semiconductor devices, will in the long term enable wireless communication with the highest bit-rate data transmission over short distances (so-called last mile). The aim is to apply our technology in places where broadband expansion with fiber optic networks is difficult and should also enable the basis for further applications in the area of 6G data transmission and subsequent generations in the future.
THzNanoVision's novel, patented THz source can be generally applied in the fields of telecommunications, non-destructive material testing, and drug or food inspection. The application fields can be extended to biomedical engineering or security engineering. What makes our THz technology particularly valuable is its differentiation from dangerous alternatives, such as X-ray and ultraviolet technology, as it is biocompatible and harmless to health. Our sustainably oriented sources use gallium nitride (GaN) material, replacing problematic currently used materials on the market, such as the rare indium (In) and the toxic arsenide (As).
Planned scope of applications
In a first application area for non-destructive imaging, we build THz generators in the frequency range mentioned above using our patented field plate and side contact technology. The application of our technology here offers imaging inspection of defects in the millimeter and submillimeter range and products, components and raw materials can be screened non-destructively. Our highly innovative THz source enables fast, non-contact and non-destructive material inspection and can check 100% of the quality of products in production lines. For this purpose, THzNanoVision already has several letters of intent from companies for future cooperation or demand for our diodes. Further companies are planning to integrate our sources in their non-destructive material testing or radar systems in the mid-term. These cooperations would enable us to significantly expand our application and sales channels also in the direction of telecommunications and at the same time provide for an additional, very high scalability of our business model.
| Project responsible: Dr.-Ing. Ahid S. Hajo |
| Mentors: Prof. Dr. rer. nat. Sascha Preu and PD Dr.-Ing. habil. Oktay Yilmazoglu |
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Team members: Deniz Cicek (M.Sc.) is working on the fabrication of the terahertz Gunn source. Yunus Celik (M.Sc.) is working on the simulations and designs of the terahertz Gunn sources. Junaid Arshad (M.Sc.) is working on the characterization of terahertz Gunn sources. |
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External Supporters: The GaN-based wafers are provided through cooperation with Prof. Armin Dadgar from the University of Magdeburg. In addition, THzNanoVision is supported by a diverse group of advisors, who stand out for their experience and expertise in their respective relevant fields. |
| A. S. Hajo: Entwicklung neuartiger Terahertz-Bauelemente auf der Basis von Nanotechnologien. Darmstadt, Technische Universität Darmstadt, DOI: 10.26083/tuprints-00020269(2022). [Ph.D. Thesis] |
| A. S. Hajo, O. Yilmazoglu, A. Dadgar, F. Küppers and T. Kusserow, “Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies,” IEEE Access, vol. 8, pp. 84116-84122, doi: 10.1109/ACCESS.2020.2991309 (2021). [Article] |
| O. Yilmazoglu and A. S. Hajo, “Gunn-Diode und Verfahren zu deren Herstellung”, PTC: WO 2021/058645 A1 (2021). [Patent] |
| A. S. Hajo, O. Yilmazoglu, A. Dadgar, F. Küppers and T. Kusserow, “Fabrication and characterization of high power Gallium Nitride based terahertz Gunn diodes,” 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Buffalo, NY, USA, pp. 1-2, doi: 10.1109/IRMMW-THz46771.2020.9370977 (2020). [Conference Item] |
| O. Yilmazoglu and A. S. Hajo, “Galliumnitrid-basierte Gunn-Diode mit Seitenkontaktierung und Laserbestrahlung”, DE: DE102018121672A1 (2020). [Patent] |
| A. S. Hajo, O. Yilmazoglu, B. Samodi, A. Dadgar, F. Küppers and T. Kussorow, "A new approach to achieve Gunn effect for GaN based THz sources with high power,” 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, pp. 1-2, doi: 10.1109/IRMMW-THz.2019.8873720 (2019). [Conference Item] |
| A. S. Hajo, O. Yilmazoglu, A. Dadgar and F. Küppers, “Reliability Improvement of High-Power THz GaN Gunn Sources for Active Imaging Systems,” 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Nagoya, Japan, pp. 1-2, doi: 10.1109/IRMMW-THz.2018.8510363 (2018). [Conference Item] |
